MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure

Kowalski, B. J.; Kowalik, I. A.; Iwanowski, R. J.; Lusakowska, E.; Sawicki, M.; Sadowski, J.; Grzegory, I.; Porowski, S.

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Condensed Matter > Materials Science

Title: MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure

Authors: B.J. Kowalski, I.A. Kowalik, R.J. Iwanowski, E. Lusakowska, M. Sawicki, J. Sadowski, I. Grzegory, S. Porowski

(Submitted on 5 Aug 2004 (v1), last revised 28 Oct 2004 (this version, v2))

Abstract: Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the valence band states of MnAs and its changes due to increase of the layer thickness were revealed.

Comments:	11 pages, 3 figures
Subjects:	Materials Science (cond-mat.mtrl-sci)
Cite as:	arXiv:cond-mat/0408111 [cond-mat.mtrl-sci]
	(or arXiv:cond-mat/0408111v2 [cond-mat.mtrl-sci] for this version)

Submission history

From: Bogdan Kowalski [view email]
[v1] Thu, 5 Aug 2004 13:24:11 GMT (380kb)
[v2] Thu, 28 Oct 2004 13:04:20 GMT (380kb)

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