Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs

Alexiev, D.; Prokopovich, D. A.; Thomson, S.; Mo, L.; Rosenfeld, A. B.

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Condensed Matter > Materials Science

Title: Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs

Authors: D. Alexiev, D. A. Prokopovich, S. Thomson, L. Mo, A. B. Rosenfeld

(Submitted on 8 Sep 2004 (this version), latest version 1 Nov 2004 (v3))

Abstract: Measurements of minority carrier diffusion lengths for p-type and n-type GaAs were carried out using an electron beam induced current (EBIC) technique. The GaAs material was grown by liquid phase epitaxy (LPE) at the Australian Nuclear Science and Technology Organisation. The diffusion lengths measured for high purity p-type and n-type LPE-GaAs samples were observed to be longer than any previously reported.

Comments:	9 pages, Part 3 of Review into Epitaxially grown GaAs
Subjects:	Materials Science (cond-mat.mtrl-sci)
Cite as:	arXiv:cond-mat/0409176 [cond-mat.mtrl-sci]
	(or arXiv:cond-mat/0409176v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Dale Prokopovich [view email]
[v1] Wed, 8 Sep 2004 01:52:13 GMT (401kb)
[v2] Fri, 29 Oct 2004 01:22:26 GMT (0kb,I)
[v3] Mon, 1 Nov 2004 04:50:45 GMT (266kb)

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