References & Citations
Condensed Matter > Materials Science
Title: Ab-initio theory of metal-insulator interfaces in a finite electric field
(Submitted on 2 Nov 2005 (v1), last revised 29 Mar 2007 (this version, v3))
Abstract: We present a novel technique for calculating the dielectric response of metal/insulator heterostructures. This scheme allows, for the first time, the fully first-principles calculation of the microscopic properties of thin-film capacitors at finite bias potential. The method can be readily applied to pure insulators, where it provides an interesting alternative to conventional finite-field techniques based on the Berry-phase formalism. We demonstrate the effectiveness of our method by performing comprehensive numerical tests on a model Ag/MgO/Ag heterostructure.
Submission history
From: Massimiliano Stengel [view email][v1] Wed, 2 Nov 2005 01:54:29 GMT (87kb)
[v2] Fri, 24 Mar 2006 01:54:08 GMT (96kb)
[v3] Thu, 29 Mar 2007 19:10:30 GMT (113kb)
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