The interface between a polar perovskite oxide and silicon from monoatomic lines

Devos, Isabelle; Boulenc, Pierre

doi:10.1063/1.2435624

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Condensed Matter > Materials Science

Title: The interface between a polar perovskite oxide and silicon from monoatomic lines

Authors: Isabelle Devos (IEMN), Pierre Boulenc (IEMN)

(Submitted on 24 Jul 2006 (v1), last revised 21 Dec 2006 (this version, v2))

Abstract: We report a study on the interface between polar high-k materials and the Si(001)-(2X1) reconstructed surface with LaAlO3 taken as a prototype material. The construction of the interface is based on the prior growth of metal lines followed by oxidation, whose stability against oxygen coverage is studied. Electronic structure calculations within the Density Functional Theory framework help in building the interface and understanding its bonding structure. Moreover, we computed a conduction band offset of 1.9 eV, in agreement with electronic applications requirement. The results may provide a guidance for interface processing.

Subjects:	Materials Science (cond-mat.mtrl-sci)
DOI:	10.1063/1.2435624
Cite as:	arXiv:cond-mat/0607609 [cond-mat.mtrl-sci]
	(or arXiv:cond-mat/0607609v2 [cond-mat.mtrl-sci] for this version)

Submission history

From: Isabelle Devos [view email] [via CCSD proxy]
[v1] Mon, 24 Jul 2006 13:56:40 GMT (865kb)
[v2] Thu, 21 Dec 2006 10:33:54 GMT (947kb)

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