Title: Defect Formation and Crossover Behavior in the Dynamic Scaling Properties of Molecular Beam Epitaxy

Abstract: Stochastic simulation results, appropriate for Molecular Beam Epitaxy, involving ballistic deposition and thermally activated Arrhenius diffusion of adatoms are presented for one- and two-dimensional substrates, allowing for overhangs and bulk vacancies. The asymptotic Kardar-Parisi- Zhang universality is found to be triggered by a sudden nucleation of large-scale defect formation in the growing film that shows a distinct dependence on dimensionality. The pre-nucleation transient behavior, which may be of experimental relevance due to the low defect content, is associated with standard solid-on-solid universality classes.