Title: Zincblende GaN (001) surfaces: Ga-stabilized structures and metallic bonding

Abstract: We have investigated energetics, atomic geometry, and electronic states of zincblende GaN (001) surfaces employing first-principles total-energy calculations. Our results reveal features not observed for other semiconductors: the surfaces are Ga-stabilized (with up to two Ga layers on the surface), and even under N-rich conditions a Ga-terminated surface is energetically most stable. Despite GaN being a wide-bandgap semiconductor the surface exhibits metallic bonding under Ga-rich conditions. Further, unusual surface structures are predicted which have never been observed for semiconductor surfaces but which closely resemble structures found at metal surfaces. Analyzing formation energies and band structure we identify the mechanisms which govern these unusual structures and discuss how they might affect growth properties.