References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Coulomb Driven New Bound States at the Integer Quantum Hall States in GaAs/Al(0.3)Ga(0.7)As Single Heterojunctions
(Submitted on 17 May 1999 (v1), last revised 19 May 1999 (this version, v2))
Abstract: Coulomb driven, magneto-optically induced electron and hole bound states from a series of heavily doped GaAs/Al(0.3)Ga(0.7)As single heterojunctions (SHJ) are revealed in high magnetic fields. At low magnetic fields (nu > 2), the photoluminescence spectra display Shubnikov de-Haas type oscillations associated with the empty second subband transition. In the regime of the Landau filling factor nu < 1 and 1 < nu <2, we found strong bound states due to Mott type localizations. Since a SHJ has an open valence band structure, these bound states are a unique property of the dynamic movement of the valence holes in strong magnetic fields.
Submission history
From: Yongmin Kim [view email][v1] Mon, 17 May 1999 21:51:16 GMT (7kb)
[v2] Wed, 19 May 1999 23:39:57 GMT (7kb)
Link back to: arXiv, form interface, contact.