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Condensed Matter > Materials Science
Title: Determination of band alignment in transition metal dichalcogenides heterojunctions
(Submitted on 19 Jun 2014 (this version), latest version 14 Apr 2015 (v4))
Abstract: The emergence of transition metal dichalcogenides (TMDs) as 2D materials beyond graphene has inspired tremendous interests in using TMDs as a new platform for atomic layer electronics1 and optoelectronics. Many proposed novel devices are based on heterostructures formed between dissimilar TMDs. Heterojunction band offset (HJBO) is the key parameter for designing HJ-based electronic/photonic devices. By using micro-beam X-ray photoelectron spectroscopy ({\mu}-XPS) and scanning tunneling microscopy/spectroscopy (STM/S), here we report the determination of band offsets in TMD heterostructures. For planar heterojunction systems formed between single-layer $\textrm{MoS}_2$, $\textrm{WSe}_2$, and $\textrm{WS}_2$ the {\mu}-XPS shows that the transitivity of HJBO holds to within the experimental uncertainty. STM/S is used to examine the HJ formed between graphite (a semimetal) and two TMDs ($\textrm{MoS}_2$ and $\textrm{WSe}_2$) from which the valence band offset of $\textrm{MoS}_2$/$\textrm{WSe}_2$ is deduced from transitivity with a value consistent with that determined from {\mu}-XPS.
Submission history
From: Chendong Zhang [view email][v1] Thu, 19 Jun 2014 18:19:02 GMT (5973kb)
[v2] Fri, 20 Jun 2014 01:27:24 GMT (5973kb)
[v3] Fri, 1 Aug 2014 16:40:41 GMT (4190kb)
[v4] Tue, 14 Apr 2015 03:15:38 GMT (1185kb)
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