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Title: Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
(Submitted on 22 Jan 2020 (v1), last revised 23 Apr 2021 (this version, v2))
Abstract: This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminium (Al) at different energies (30 - 200 keV) were carried out to achieve 300 nm thick acceptor box profiles with a concentration of about 1020 at/cm3. The implanted samples were annealed at high temperatures (1675-1825 {\deg}C). Morphological analyses of the annealed samples revealed only a slight increase of the surface roughness RMS up to 1775{\deg}C, while this increase becomes more significant at 1825{\deg}C (RMS=1.2nm). Room temperature Hall measurements resulted in a hole concentration in the range 0.65-1.34x1018/cm3 and mobility values in the order of 21-27 cm2V-1s-1. The temperature dependent electrical measurements allowed to estimate an activation energy of the Al-implanted specie of about 110 meV (for the post-implantation annealing at 1675{\deg}C) and a fraction of active p-type Al-dopant ranging between 39% and 56%. The results give useful indications for the fabrication of 4H-SiC JBS and MOSFETs.
Submission history
From: Fabrizio Roccaforte [view email][v1] Wed, 22 Jan 2020 14:07:04 GMT (328kb)
[v2] Fri, 23 Apr 2021 08:31:22 GMT (328kb)
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