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Physics > Applied Physics
Title: Phosphorus-Controlled Nanoepitaxy in the Asymmetric Growth of GaAs-InP Core-Shell Bent Nanowires
(Submitted on 12 May 2023 (v1), last revised 15 May 2023 (this version, v2))
Abstract: Breakthroughs extending nanostructure engineering beyond what is possible with current fabrication techniques will be crucial for enabling next-generation nanotechnologies. Nanoepitaxy of strain-engineered bent nanowire heterostructures presents a promising platform for realizing bottom-up and scalable fabrication of nanowire devices. The synthesis of these structures requires the selective asymmetric deposition of lattice-mismatched shells-a complex growth process which is not well understood. We present the nanoepitaxial growth of GaAs-InP core-shell bent nanowires and connecting nanowire pairs to form nano-arches. Compositional analysis of nanowire cross-sections reveals the critical role of adatom diffusion in the nanoepitaxial growth process, which leads to two distinct growth regimes: indium-diffusion limited growth and phosphorous-limited growth. The highly controllable phosphorous-limited growth mode is employed to synthesize connected nanowire pairs and quantify the role of flux shadowing on the shell growth process. These results provide important insight into three-dimensional nanoepitaxy and enable new possibilities for nanowire device fabrication.
Submission history
From: Spencer McDermott W [view email][v1] Fri, 12 May 2023 05:03:09 GMT (1010kb)
[v2] Mon, 15 May 2023 00:33:21 GMT (1490kb)
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