References & Citations
Condensed Matter
Title: Nanoscale Field-Effect Transistors: An Ultimate Size Analysis
(Submitted on 3 Jun 1997 (this version), latest version 17 Nov 1997 (v2))
Abstract: We have used a simple analytically solvable model to analyze the characteristics of dual-gate metal-oxide-semiconductor field-effect transistors with 10-nm-scale channel length $L$. The model assumes ballistic dynamics of 2D electrons in an undoped channel between highly doped source and drain. When applied to silicon n-MOSFETs, calculations show that the voltage gain (necessary for logic applications) drops sharply at $L\sim 10 nm$, while the conductance modulation remains sufficient for DRAM cell applications until $L\sim 4 nm$.
Submission history
From: Fedor G. Pikus [view email][v1] Tue, 3 Jun 1997 17:40:29 GMT (65kb)
[v2] Mon, 17 Nov 1997 22:50:42 GMT (61kb)
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