Title: Optical plasma microelectronic devices

Abstract: The great majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices are limited due to natural semiconductor properties such band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas plasma channel may scale their speed, wavelength, and power beyond what is available today. However, gas plasma creation, without applying high voltages, is quite challenging in a practical device. Here, we successfully generate an electro-optically triggered gas plasma channel to be used in feasible microplasma devices. The combination of DC and laser-induced gas ionizations controls the conductivity of the channel, enabling us to realize different electronic devices such as transistors, switches, and modulators. A special micro-scale metasurface was used to enhance the laser-gas interaction, as well as combining it with DC ionization properly. Optical plasma devices benefit from the advantages of plasma/vacuum electronic devices while preserving most of the integrablity of semiconductor-based devices.