Title: Study of Silicon Photomultiplier Radiation Hardness with Proton Beam from the JULIC Cyclotron

Abstract: In this work we study the performance of silicon photomultiplier (SiPM) light sensors after exposure to the JULIC cyclotron proton beam, of energy $\sim$ 39 MeV, relative to their performance before exposure. The SiPM devices used in this study show a significant change in their behavior and downward shift of their breakdown voltage by as much as $\sim$ 0.4$\pm$0.1 V. Single photon measurements appear to be no longer possible for the SiPMs under study after exposure to a dose of $\sim$ 0.2 Gy (corresponding to an integrated proton flux of $\sim$$\phi_{p}$=1.06x10$^{8}$ p/cm$^{2}$). No visible damage to the surface of the devices was caused by the exposure.