Title: Study of Silicon Photomultiplier Radiation Hardness with the JULIC Cyclotron

Abstract: In this work we study the performance of silicon photomultiplier (SiPM) light sensors after exposure to the JULIC cyclotron proton beam, of energy ~35 MeV, relative to their performance in the absence of an exposure. The SiPM devices used in this study show a significant change in their behavior and relatively large shift towards lower values, by up to ~2 V, in their breakdown voltage. The SiPMs are found to be no longer usable for single photon measurements after being exposed to radiation dose of ~0.2 Gy. No visible damage to the surface of the devices was caused by the exposure.